drain capacitance meaning in Chinese
漏电容
Examples
- It is shown that neglecting the gate - drain capacitance of the mosfet would lead to an overestimation of the optimum device width in the cmos source degenerated lna
本文证明了在cmos源端degeneration结构的低噪声放大器中，忽略场效应管的栅漏电容将造成对放大管的最优栅宽估计过大。 - The lna with source inductor degeneration is analyzed in detail , which is used most widely in current . base on the analysis , a cascode structure is presented to minimize the effect of gate - drain capacitance cgd
针对目前lna中应用最广泛的源极电感负反馈结构,进行了详细分析,在此基础上对该结构做出了优化,采用共源共栅级联结构,减小了栅漏电容cgd的影响。